Infineon's CoolSIC mosfet 1200 V and IGBT7 H7 1200 V series power semiconductors adopt the latest semiconductor technology and design concepts tailored for industrial applications.

Infineon provides its power semiconductor equIPMent to Focus, which is a rapidly developing leader in the renewable energy sector and a producer of inverters and energy storage systems. Both sides are committed to promoting the growth of renewable energy. Infineon will provide its cooler. Mosfetz 1200V, this system will be used in industrial energy storage applications together with the EicedR2 gate driver program. Meanwhile, Fox will utilize Infineon's IGBT7H71200V semiconductor power device in its string PV inverter.

In recent years, the global photovoltaic energy storage system (PV-ES) market has experienced rapid growth. With the continuous enhancement of competitiveness in the PV-ES industry, improving power density has become a key factor for achieving success. Therefore, there is a strong interest in exploring methods to improve the efficiency and power density of energy storage applications. Infineon's CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices adopt advanced semiconductor technology and design principles specifically developed for industrial applications.

Infineon's CoolSiC MOSFET 1200 V has a high power density, which can reduce losses by 50% and provide about 2% more energy without the need for larger batteries. This is particularly advantageous for energy storage systems that prioritize high performance, lightweight, and compactness. The power range of the FOXESS H3PRO energy storage series is 15 kW to 30 kW, using Infineon's CoolSiC MOSFET, and all models have a rated voltage of 1200 V. Infineon's outstanding performance enables the H3PRO series to achieve efficiency of up to 98.1% and excellent electromagnetic compatibility (EMC) performance. Due to its outstanding performance and reliability, the H3PRO series has achieved significant sales growth in the global market.

At present, the main industrial and commercial models of FOXESS, R series 75-110kW, have enhanced the overall design of the 100kW model by incorporating IGBT7 H7 series discrete components, resulting in machine efficiency of up to 98.6%. The IGBT7 H7 series adopts discrete packaging, which has low power loss and high power density, simplifying and optimizing technical issues such as current sharing during parallel operation. Each power device requires a driver, and selecting the appropriate driver can significantly simplify the design process.

Infineon offers a variety of EiceDRIVE gate drivers with a total of over 500 models. These gate drivers have an output current range of 0.1 A to 18 A and have various protection functions, such as fast short-circuit protection (DESAT), active Miller clamping, through protection, fault reporting, shutdown, and overcurrent protection. They are compatible with all power devices, including CoolSiC and IGBT. Fushite Technology is deeply involved in the field of power devices, providing customers with power devices such as microcontrollers (MCUs) and touch chips. It is an electronic component supplier and solution provider with core technology.