Recently, Vishay Intertechnology, a leading global semiconductor and passive component manufacturer, announced that its Vishay Semiconductors business unit has successfully launched 16 new third-generation 1200V silicon carbide (SIC) Schottky diodes. These newly launched devices adopt a unique merged PIN Schottky (MPS) design, providing higher efficiency and reliability for switch mode power supply systems.

The new SiC diode, with its MPS design, combines high surge current tolerance with performance advantages such as low forward voltage drop, capacitor charging, and reverse leakage current, setting a new standard for the industry. These diodes offer a wide range of current options from 5A to 40A and come in various packaging forms, including TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L perforated packaging, as well as D2PAK 2L (TO-263AB 2L) surface mount packaging, to meet the needs of different application scenarios.

According to Vishay Intertechnology, the new SiC diode has a capacitance charging capacity as low as 28nC, and its MPS structure thins the back through laser annealing technology, achieving a low forward voltage drop of 1.35V. This breakthrough design not only improves energy efficiency, but also helps to reduce system cooling requirements, thereby extending the service life of the equIPMent.

In addition, these diodes exhibit a reverse leakage current as low as 2.5 µ A at 25C, which helps to minimize conduction losses and ensure that the system can still maintain optimal efficiency under light load and idle conditions. Compared with other high-speed switching diodes on the market, the third-generation SiC diodes generate almost no residual charges, further improving the overall efficiency of the system.

These advanced SiC diodes have been widely used in various fields, including AC/DC power factor correction (PFC), DC/DC converters, solar inverters, energy storage systems, industrial drives, and data centers. These application scenarios place extremely high demands on the efficiency and reliability of power systems, and Vishay Intertechnology's new products are designed to meet these demands.

The new SiC diode is well-designed and can withstand harsh working environments, with a working temperature range of up to+175C and a forward surge rating of up to 260A. In addition, the diodes in the D2PAK 2L package also use molded compounds with a high comparative tracking index (CTI) of at least 600, ensuring excellent electrical insulation performance even at high voltages.

With the increasing global demand for clean and efficient energy utilization, Vishay Intertechnology's third-generation SiC Schottky diodes will undoubtedly bring higher performance and longer lifespan to power systems. The launch of this innovative technology once again demonstrates Vishay Intertechnology's leading position and ability to continuously innovate in the semiconductor technology field.

Faust Technology focuses on the field of power devices, providing customers with power devices such as IGBT and IPM modules, as well as MCU and touch chips. It is an electronic component supplier and solution provider with core technology.