Due to the increasing power demand for artificial intelligence (AI) processors, server power supply (PSU) needs to provide more power within the size of the server rack specifications. The increasing energy demand for high-performance GPUs is the main driving force behind this trend. It is expected that by the end of this century, the energy consumption of each chip may reach 2 kilowatts or more.

In order to meet the continuous improvement of application requirements and unique customer requirements, Infineon Technologies Co., Ltd. has decided to expand the development of SIC mosfets to voltage ranges below 650V. The company is currently launching a new CoolSiC based on the second-generation (G2) CoolSiC technology released earlier this year ™ 400V MOSFET family.

Infineon has created a new MOSFET product portfolio specifically for the AC/DC phase of AI servers, which complements Infineon's recently released PSU roadmap. These devices are highly suitable for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supply (SMPS), and solid-state circuit breakers in residential buildings.

Compared to the current 650V SiC and Si MOSFETs, the new family significantly reduces conduction and switching losses. The AC/DC stage of the AI server PSU adopts multi-level PFC, which can achieve a power density of 100 W/in ³ and has been proven to achieve an efficiency of 99.5%. Compared with the solution using 650V SiC MOSFET, the efficiency of this solution has increased by 0.3 percentage points. In addition, integrating CoolGaN during the DC/DC phase ™ Transistors have completed the system solution for AI server PSU. By utilizing a combination of high-performance MOSFETs and transistors, the power supply can provide over 8 kW of power, resulting in a power density increase of more than three times compared to existing systems.

The updated MOSFET series includes a total of 10 products. Covering five different RDS (on) levels, ranging from 11 to 45 milliohms. MOSFET adopts Kelvin source TOLL and D ² PAK-7 packaging, and is equipped with XT packaging connection technology. At T vj=25C, the leakage source breakdown voltage of 400V makes these components very suitable for use in 2nd and 3rd stage converters and synchronous rectifiers. The component exhibits excellent durability in complex switching situations and has undergone thorough avalanche testing to ensure its reliability.

Advanced and durable CoolSiC technology XT connection technology enables these devices to handle unexpected power increases and fluctuations caused by sudden changes in AI processor power demand. The connection technology and low and positive RDS (on) temperature coefficient provide excellent performance when the junction temperature increases.