Recently, semiconductor solution provider Nexperia announced that it will continue to expand its NextPower series mosfets, launching multiple new LFPAK devices covering voltage levels of 80V and 100V. These new products are packaged in industry standard 56mm and 88mm sizes, designed to meet the high efficiency and low electromagnetic interference requirements of modern electronic applications.

The new NextPower 80/100 V MOSFET has achieved significant performance improvements in design, with low on resistance RDS (on) and optimized reverse recovery charge Qrr. This design enables these MOSFETs to maintain high efficiency and reduce the generation of spike voltages during the switching process, thus performing well in fields such as power management and motor control. Especially in applications such as servers, power adapters, fast chargers, and USB-PD, the overall system efficiency and reliability have been improved.

According to data provided by Nexperia, these MOSFETs have a wide range of RDS (on) values, from 1.8 m Ω to 15 m Ω, and designers can choose suitable devices according to different application requirements. This flexibility enables engineers to better optimize designs and achieve the required performance standards.

In MOSFET design, many manufacturers typically focus on parameters such as QG (tot) and QGD to improve switching efficiency. However, Nexperia found through in-depth research that Qrr (reverse charge recovery) is equally crucial. The optimization of Qrr not only affects switch performance, but also directly relates to the level of electromagnetic interference (EMI) generated by the equIPMent during operation. By prioritizing this parameter, Nexperia successfully reduced the peak voltage of the new NextPower MOSFET, significantly reducing the generation of EMI.

This characteristic of reducing electromagnetic interference means that end users do not need to worry about the potential risks of equipment failing electromagnetic compatibility (EMC) testing in applications, avoiding the need for expensive design modifications in the final stages of the project. This is undoubtedly an important advantage for industry users who pursue efficient and reliable solutions.

Compared with existing competitors' products, the on resistance (RDS (on)) of the new generation MOSFET has been reduced by 31%. In addition, Nexperia also plans to launch a new LFPAK88 MOSFET in the near future, which can achieve RDS (on) as low as 1.2 m Ω at 80V. This progress will further expand the application scenarios of the NextPower series and provide users with stronger design flexibility.

At the same time, Nexperia also plans to include its power intensive CCPAK1212 device in its product portfolio, which will further enhance its competitiveness in high-power applications.

To support engineers in the design and certification process, Nexperia provides award-winning interactive data sheets. These data sheets not only contain detailed device characteristics, but also present information in a user-friendly manner, helping engineers quickly obtain the required technical details. This support measure greatly improves design efficiency and enhances users' confidence in the product.

Nexperia's continuous innovation and expansion in the MOSFET field, particularly in improving energy efficiency and reducing electromagnetic interference, demonstrates its relentless pursuit of meeting market demand. With the launch of new products, Nexperia not only provides designers with a wider range of choices, but also lays the foundation for improving the overall performance and reliability of electronic devices. As the demand for high efficiency and low EMI in the electronics industry continues to grow, Nexperia's NextPower series will undoubtedly become the preferred solution for multiple application areas.

Fushite Technology focuses on the field of power devices, providing customers with power devices such as IGBT and IPM modules, as well as MCU and touch chips. It is an electronic component supplier and solution provider with core technology.