First Tech

Product Name: HIA20N65T-SA

Manufacturer: SemiHow

Product type: Insulated Gate Bipolar Transistor (IGBT)

Product Overview:

HIA20N65T-SA is a high-performance insulated gate bipolar transistor launched by SemiHow, designed to meet the strict requirements of modern power electronic systems for high efficiency, stability, and durability. This IGBT is an ideal choice for various high-power applications due to its excellent electrical characteristics and thermal performance.

Core advantages:

-High voltage withstand: A collector emitter voltage of 650V ensures reliable operation in high voltage environments.

-High current capacity: A collector current of 20A, suitable for handling high current loads.

-Low conduction loss: Optimized saturation voltage design effectively reduces energy loss during conduction.

-Fast switching feature: reduces switching time, improves system efficiency and response speed.

-Enhanced short-circuit protection: Provides additional short-circuit resistance, enhances product stability and safety.

-Environmental compliance: Compliant with RoHS directives, reflecting a commitment to environmental protection.

Application scenario:

-Industrial motor control and drive system

-High efficiency power converter

-Uninterruptible Power Supply (UPS) and Voltage Stabilizer

-Renewable energy inverters, including solar and wind energy systems

-Electric Vehicle (EV) Charging Infrastructure

The HIA20N65T-SA IGBT provides an efficient and stable solution for power electronics engineers with its powerful performance and reliability. Whether in the fields of industrial automation, energy management, or electric vehicles, this IGBT can meet the strict requirements for high performance and high reliability. SemiHow has once again demonstrated its leading position in the field of power semiconductors through HIA20N65T-SA, providing innovative and reliable power electronics solutions to global customers.