Product Name: HIS20N65T-SA
Manufacturer: SemiHow
Product type: Insulated Gate Bipolar Transistor (IGBT)
Product Overview: HIS20N65T-SA represents an important innovation of SemiHow in the field of power electronics technology. This IGBT utilizes cutting-edge semiconductor technology to achieve optimized electrical parameters and thermal performance, making it particularly suitable for use in high demand industrial, energy, and transportation fields.
Key features:
High voltage resistance: The collector emitter voltage resistance of 650V provides safety assurance for various high-voltage applications.
Strong current carrying capacity: A rated collector current of 20A, suitable for high current loads.
Reduce conduction loss: Optimize the Vce (sat) value to ensure low power consumption during high current operation.
Dynamic performance optimization: Fast switching response reduces losses during switching and enhances operational efficiency.
Enhanced short-circuit stability: In order to cope with abnormal working conditions, it provides additional protection and extends the service life of the product.
Environmentally friendly manufacturing: Adhere to RoHS standards to reduce environmental impact.
Application direction:
High performance industrial drive device
Energy transmission and distribution system
Advanced power regulation system
Renewable energy systems, such as solar inverters and wind energy conversion devices
Charging solutions for large electric vehicles
The high withstand voltage and current carrying capacity of HIS20N65T-SA, combined with its low loss and fast switching function, make it an ideal choice for high demand applications. SemiHow is committed to providing reliable products that meet the latest technological standards, and HIS20N65T-SA IGBT is a manifestation of this commitment. Whether in efficient industrial automation equIPMent, clean energy collection and conversion, or in fast charging technology for electric vehicles, this IGBT can provide excellent performance and reliability.