First Tech

Product Name: GHXS100B120S-D3 SIC Diode module

Manufacturer: SemiQ

Product Introduction: GHXS100B120S-D3 is a high-performance silicon carbide (SiC) diode module launched by SemiQ company. This module adopts cutting-edge SiC technology, aiming to provide excellent performance and reliability for power electronics applications. SiC diodes are favored for their low switching loss, high operating temperature, and excellent thermal characteristics, making them highly suitable for demanding power conversion and control applications.

Core advantages:

High efficiency: The high bandgap characteristics of SiC materials enable diodes to operate at higher frequencies, reducing energy loss and improving overall system efficiency.

High temperature operation: GHXS100B120S-D3 can operate stably at junction temperatures up to 175C, making it suitable for use in extreme environments.

Fast switching: The fast recovery characteristics of SiC diodes enable them to achieve extremely fast switching speeds and reduce switching losses.

High voltage capability: This module has a reverse voltage rating of 1200V and can handle high voltage applications.

Compact design: The compact size of the module facilitates integration into various power electronic devices.

Application scope: GHXS100B120S-D3 SiC diode module is suitable for various high-efficiency and high-power density applications, including but not limited to:

Charging and powertrain systems for electric vehicles (EVs) and hybrid electric vehicles (HEVs)

Solar inverter

Industrial motor drive

Uninterruptible Power Supply (UPS)

High frequency power converter

Key parameters:

Reverse voltage (V-RRM): 1200V

Forward current (I-F): 100A

Forward voltage (VFF): typical value (at specific current)

Reverse recovery time (trr): typical value (under specific conditions)

Junction temperature range (Tj): -55C to 175C