Become a semiconductor component supplier and solution provider with core technologies
Tel(微信同号): +86 18926567115

Product

SemiQ-MOD

Diode Module

GHXS050B065S-D3

Product Name: GHXS050B065S-D3Type: Silicon carbide (SiC) diode moduleManufacture
Diode Module
product details

Product Name: GHXS050B065S-D3

Type: Silicon carbide (SIC) diode module

Manufacturer: SemiQ

Product Description: GHXS050B065S-D3 is a high-performance silicon carbide (SiC) diode module launched by SemiQ company, designed specifically for high efficiency and high power density power conversion applications. This module adopts advanced SiC technology, providing superior performance characteristics compared to traditional silicon-based diodes, including lower switching losses, higher operating temperatures, and faster switching speeds. These characteristics make GHXS050B065S-D3 very suitable for use in electric vehicle (EV) chargers, solar inverters, industrial power supplies, and other power systems that require high-frequency and high-efficiency operation.

Main features:

Wide bandgap semiconductor technology: By utilizing the wide bandgap characteristics of SiC, it provides higher breakdown electric field strength and thermal conductivity, thereby achieving higher operating temperature and lower conduction resistance.

High efficiency: Compared with silicon-based diodes, SiC diodes have lower switching losses, which helps improve the overall power conversion efficiency.

Fast switching speed: The fast switching ability of SiC diodes helps reduce the size and weight of power conversion systems.

High operating temperature: The high thermal stability of SiC material allows the module to operate at temperatures up to 200C, making it suitable for harsh environments.

Enhanced durability: The inherent characteristics of SiC diodes provide better surge current resistance and longer service life.

Technical specifications:

Reverse voltage (V-R): 650V

Forward current (I-F): 50A

Forward voltage (VFF): Typical value 1.45V (at IF=50A)

Reverse recovery time (trr): typical value of 35ns

Working junction temperature (Tj): -55C to 200C

Application field:

Electric Vehicle (EV) Charging Infrastructure

Solar and wind energy inverters

Industrial motor drive

Uninterruptible Power Supply (UPS) System

High frequency switching power supply (SMPS)

The GHXS050B065S-D3 SiC diode module is an ideal choice for power electronics engineers who pursue high efficiency, high reliability, and compact design. SemiQ has once again demonstrated its leading position in the field of silicon carbide power semiconductors through this product. If you need to inquire about detailed product parameters, click to download the specification sheet! For business cooperation, please leave a message or directly click on the contact information on the right to contact us!