In today's rapidly advancing semiconductor technology, silicon carbide (SIC) mosfet, as a star device in the field of power electronics, has always been a focus of attention for researchers to improve its performance. Recently, a breakthrough research achievement revealed the magical role of boron element in the annealing process of SiC MOSFET after oxidation, which not only pushed the channel mobility (μ FE) of the device to an unprecedented height, but also greatly improved the reliability of the device, opening up a new path for the efficiency improvement and stability guarantee of power electronic systems.

Traditionally, nitric oxide (NO) has been widely used as the main gas for annealing SiC MOSFETs after oxidation, aiming to reduce the interface trap density and thus improve the μ FE to 20 to 40 cm ²/V · s to a certain extent. However, this level is still insufficient for application scenarios that pursue ultimate performance. In this context, researchers have innovatively proposed a new strategy of introducing boron elements during annealing, which is like pressing an accelerator button for the performance improvement of SiC MOSFETs.

The experimental results show that the addition of boron element acts as a catalyst, greatly promoting the optimization of the internal structure of SiC MOSFET, resulting in a qualitative leap in channel mobility, up to 100 cm ²/V · s, which is 2.5 to 5 times higher than the traditional carbon monoxide annealing method. This astonishing data not only marks a significant breakthrough in the electron transfer efficiency of SiC MOSFETs, but also lays a solid foundation for the development of high-power and high-efficiency power electronic devices.

What is even more exciting is that the introduction of boron element is not limited to the improvement of mobility. The study also found that by finely controlling the concentration of boron, the interface density of states (Dit) of SiC MOSFETs can be further reduced by about 70%. The interface state density is an important indicator for measuring the interface quality of devices, and its reduction means a significant reduction in interface traps, which has immeasurable value for improving the reliability and extending the service life of devices. Therefore, the addition of boron element not only makes SiC MOSFET run faster, but also makes it run more stably and farther.

The publication of this research result undoubtedly injects new vitality into SiC MOSFET and even the entire power electronics industry. With the continuous maturity of technology and the deepening expansion of applications, we have reason to believe that boron, as a "performance accelerator," will showcase its unique charm in more high-end power electronic devices in the future, promoting the power electronics industry towards a more efficient, reliable, and green development path.

The innovative application of boron element in the annealing process of SiC MOSFET after oxidation not only significantly improves the channel mobility of the device, but also greatly improves the reliability of the device, providing strong support for the continuous progress of power electronics technology.