Power Master is the only comprehensive power semiconductor company in South Korea, founded in January 2018 by a group of experts with over 20 years of experience in power semiconductor design, production, application technology, and marketing in advanced companies. Its headquarters and headquarters are located in Qingzhou. FAB Chungcheongbuk do has research and development facilities in Fuchuan City, Gyeonggi Province.
Powermaster Semiconductor has set a milestone for Korean power semiconductors.
In order to provide cost-effective solutions for power semiconductors dominated by a few advanced companies, we continuously
Market that values efficiency in servers, energy, electricity, and other areas
Launch new products such as super junction mosfets, medium voltage MOSFETs, SIC diodes, and SiC MOSFETs. Industrial applications and electric vehicle releases.
In addition, in addition to new products, we also support system solutions by supporting tailored application technologies for each application.
The core process achieves technological differentiation internally through continuous investment, while the general process achieves cost reduction through negotiation with partners.
Through this, we are growing into the only comprehensive semiconductor company in South Korea that covers product development and manufacturing.
Power master products:
Silicon carbide MOSFET:
ESiC MOSFETs provide design flexibility, enabling high system efficiency and higher switching frequencies, thereby reducing system size and improving reliability.
Silicon carbide diode:
ESiC diode is an advanced Power Master Semiconductor silicon carbide diode series. This technology combines the advantages of excellent low forward voltage and high durability. It can be certain that eSiC diodes are suitable for applications that require high power efficiency
High pressure MOSFET:
The eMOS E7 opens the door for power converter designers to pursue high efficiency and ease of use. This eMOS E7 enables us to provide cost-effective, reliable, and powerful solutions for AC/DC and DC/DC applications such as PFC, hard switching, and soft switching. The breakdown voltage range is 600 V to 650 V, and eMOS E7 will offer multiple packaging options.
Medium voltage MOSFET:
Main features: Excellent robustness, good hard and soft switching performance, significantly reducing switching and conduction losses