Power Master Semiconductor has launched the second-generation 1200V eSIC mosfet to meet the demands for higher efficiency, power density, strong reliability, and durability in a range of applications such as DC electric vehicle charging stations, solar inverters, energy storage systems (ESS), motor drivers, and industrial power supplies.

The 1200V eSiC MOSFET provides significant advantages to the system, including increased power density, improved efficiency, and reduced cooling requirements (due to significantly reduced power losses). SiC MOSFETs are becoming increasingly popular, especially for renewable energy systems and electric vehicle charging systems that require higher power density, efficiency, and resilience. DC electric vehicle charging station is a 3-level charger that improves its power level through modular structure to meet the needs of faster charging time and larger battery capacity for electric vehicles. DC electric vehicle charging provides consistent current output, covering a wide range of DC output voltages (200V to 900V) and load curves.

The key performance coefficient (FOM) of the second-generation 1200V eSiC MOSFET has increased by up to 30% compared to the previous generation, including gate charge (QG), output capacitor energy storage (EOSS), reverse recovery charge (QRR), and output charge (QOSS). The latest SiC MOSFET technology has significant advantages for power conversion applications, including reducing power losses to achieve smaller, lighter, and more efficient systems, and requiring less cooling.

The 1200V eSiC MOSFET Gen2 has excellent switching performance and has undergone comprehensive avalanche capability testing. By significantly reducing Miller capacitance (QGD), the latest version of the switch loss has been significantly reduced by 44% compared to the previous generation product.

Power Master Semiconductor is steadfastly committed to developing the most advanced, efficient, and sustainable power device solutions. The emergence of the new generation of 1200V eSiC MOSFETs represents significant progress in creating environmentally friendly and efficient power systems. Power Master Semiconductor is confident that the 1200V eSiC Gen2 MOSFET will have a significant impact on high-performance applications.

Fushite Technology focuses on the field of power devices, providing customers with power devices such as IGBT and IPM modules, as well as MCU and touch chips. It is an electronic component supplier and solution provider with core technology.